LLNL scientists study the mechanism of nonlinear irradiation defects in silicon carbide

Abstract [According to the Lawrence Livermore National Laboratory website reported on April 13, 2017] Materials scientists at Lawrence Livermore National Laboratory (LLNL) have made further progress in understanding the kinetics of silicon carbide defect interactions. Science Report March
[Reported by Lawrence Livermore National Laboratory website on April 13, 2017] Materials scientists at Lawrence Livermore National Laboratory (LLNL) have made further progress in understanding the kinetics of silicon carbide defect interactions.
A study published in the March 17 issue of the Science Report showed that the research team at LLNL and Texas A&M University used the newly developed pulsed ion beam method to study the impact of collision cascade density on silicon carbide irradiation defects. Silicon carbide is a ceramic, wide bandgap semiconductor material. The team systematically studied the mechanism of irradiation defects in a variety of ion bombardment silicon carbide collision cascades, which have large variations in density. Researchers used pulsed ion beams to measure the lifetime of moving defects and developed a new method for calculating cascade densities.
The team found that higher density collision cascades not only caused more defects, but also developed much slower than low-density cascades. This study demonstrates for the first time that in addition to the dose rate, the kinetics of defect interactions in silicon carbide is strongly dependent on the cascade density.
The LLNL project leader said that this work indicates that silicon carbide is expected to be damaged differently in different neutron flux and energy radiation environments, and any true radiation defect prediction model needs to include defect interaction dynamics.
For many non-metallic materials, the collision cascade density determines the degree of damage to the material by irradiation. However, the impact of collisional cascade density on the mechanism of irradiation defects has not been explored. Irradiation defect mechanism is still one of the most complex, poorly understood, and widely debated topics in the field of irradiation defects.
Silicon carbide is often used to power electronic devices that operate at high temperatures and pressures, such as transistors. In addition, the feasibility of silicon carbide as a nuclear fuel cladding has been studied.

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