A cross-European research team, including the UK National Physics Laboratory, has developed an incredible graphene material that will be a key component of future high-speed electronics such as microchips and touch screens. With the advancement of this achievement, the research on the production of new materials as the basis of future nanotechnology has taken another step forward.
Graphene has long demonstrated its enormous potential, but it was previously only possible to achieve small-scale production, which has limited limitations for better measurement, understanding and development. In the January 17 issue of Nature·Nanotechnology, researchers showed for the first time how to expand graphene size and improve quality to meet practical development methods and successfully measure its electronic properties. These major breakthroughs have overcome two of the biggest obstacles in expanding the application of graphene technology.
So far, high quality graphene can only be embodied in the form of fractions of a millimeter, using a method such as tape stripping from a layer of graphite crystal. To produce a practical electronic device, it is necessary to grow a larger size material. Now, researchers have for the first time successfully manufactured and run a large number of electronic devices with a large area (about 50 square millimeters) of graphene layer.
This graphene sample is formed epitaxially on silicon carbide, which is a method of growing another crystal layer on one crystal layer. With such an important sample, it not only proves that graphene can be actually produced in a scalable manner, but also enables scientists to better understand its important properties.
The second major breakthrough in the project was to achieve an unprecedented level of precision to measure the electrical properties of graphene, paving the way for easier and more accurate standards.
The international standard for measuring resistance is based on the quantum Hall effect, that is, the electrical properties of a two-dimensional material can only be determined by its fundamental natural constant. As of now, this effect can only be demonstrated with sufficient accuracy in a small number of conventional semiconductors. In addition, such measurements need to be performed at temperatures close to absolute zero, while still applying very strong magnetic fields, but only a few specialized laboratories around the world have such conditions.
In the long run, graphene tends to provide a better standard, but current samples are not enough to do this. By producing samples of sufficient size and quality and accurately displaying Hall resistance, researchers have demonstrated the potential of graphene to replace traditional semiconductors on a large scale.
In addition, graphene can exhibit quantum Hall effect at higher temperatures. This means that graphene resistance standards can be used more widely, and more laboratories will be able to meet the conditions required for measurement. In addition to the advantages of speed and durability, this will also speed up the production process and reduce the cost of future graphene-based electronic technology products.
Professor Alexander Chalenchuk of the Quantum Testing Group of the National Physical Laboratory of the United Kingdom pointed out that the most sensational thing about this project is that large-scale epitaxial graphene not only demonstrates its structural continuity, but also the precision required for accurate measurement. It is not inferior to traditional semiconductors with a long history.
Graphene has long demonstrated its enormous potential, but it was previously only possible to achieve small-scale production, which has limited limitations for better measurement, understanding and development. In the January 17 issue of Nature·Nanotechnology, researchers showed for the first time how to expand graphene size and improve quality to meet practical development methods and successfully measure its electronic properties. These major breakthroughs have overcome two of the biggest obstacles in expanding the application of graphene technology.
So far, high quality graphene can only be embodied in the form of fractions of a millimeter, using a method such as tape stripping from a layer of graphite crystal. To produce a practical electronic device, it is necessary to grow a larger size material. Now, researchers have for the first time successfully manufactured and run a large number of electronic devices with a large area (about 50 square millimeters) of graphene layer.
This graphene sample is formed epitaxially on silicon carbide, which is a method of growing another crystal layer on one crystal layer. With such an important sample, it not only proves that graphene can be actually produced in a scalable manner, but also enables scientists to better understand its important properties.
The second major breakthrough in the project was to achieve an unprecedented level of precision to measure the electrical properties of graphene, paving the way for easier and more accurate standards.
The international standard for measuring resistance is based on the quantum Hall effect, that is, the electrical properties of a two-dimensional material can only be determined by its fundamental natural constant. As of now, this effect can only be demonstrated with sufficient accuracy in a small number of conventional semiconductors. In addition, such measurements need to be performed at temperatures close to absolute zero, while still applying very strong magnetic fields, but only a few specialized laboratories around the world have such conditions.
In the long run, graphene tends to provide a better standard, but current samples are not enough to do this. By producing samples of sufficient size and quality and accurately displaying Hall resistance, researchers have demonstrated the potential of graphene to replace traditional semiconductors on a large scale.
In addition, graphene can exhibit quantum Hall effect at higher temperatures. This means that graphene resistance standards can be used more widely, and more laboratories will be able to meet the conditions required for measurement. In addition to the advantages of speed and durability, this will also speed up the production process and reduce the cost of future graphene-based electronic technology products.
Professor Alexander Chalenchuk of the Quantum Testing Group of the National Physical Laboratory of the United Kingdom pointed out that the most sensational thing about this project is that large-scale epitaxial graphene not only demonstrates its structural continuity, but also the precision required for accurate measurement. It is not inferior to traditional semiconductors with a long history.
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