In recent years, green energy conservation has become the theme of development. Today's world is constantly seeking more efficient and energy-saving light sources as a substitute for traditional lighting sources. LED light sources are the best choice, followed by the application of high-brightness LEDs in lighting in recent years. Continued and rapid expansion. The introduction of laser wafer scribe process in LED manufacturing makes LEDs widely used in LCD backlights such as mobile phones, TVs and touch screens, and the most exciting is the application of white LEDs in lighting.
Laser scribing of the scribe line of the LED is much narrower than conventional mechanical scribing, so material utilization is significantly improved, thus increasing output efficiency. In addition, laser processing is a non-contact process, which results in wafer microcracks and other damage, which makes the wafer particles closer together, high output efficiency, high productivity, and the reliability of finished LED devices is greatly improved. .
LED laser scribing features
Single crystal sapphire (Sapphire) and gallium nitride (GaN) are hard and brittle materials (tensile strength close to steel), so it is difficult to cut into individual LED devices. When cutting these materials with a conventional mechanical saw blade, it is easy to cause damage such as wafer chipping, microcracking, delamination, etc., so the LED wafer is cut with a saw blade, and a wide width must be reserved between the monomers to avoid cracking. Injury to LED devices, which greatly reduces the efficiency of LED wafers.
Laser processing is non-contact processing. As an alternative to traditional mechanical saw blade cutting, the laser dicing cut is very small. The focused laser spot is applied to the surface of the wafer to rapidly vaporize the material and create very much between the active areas of the LED. Tiny cuts allow more LEDs to be cut on a limited area of ​​wafer. Laser scribing is particularly good at gallium arsenide (GaAs) and other brittle compound semiconductor wafer materials. Laser processing of LED wafers, the typical scribe depth is 1/3 to 1/2 of the thickness of the substrate, so that the segmentation can obtain a clean fracture surface, and the production of narrow and deep laser scribe cracks while ensuring high-speed scribe Speed, which requires the laser to have excellent quality such as narrow pulse width, high beam quality, high peak power, and high repetition rate. See http:// for details
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